Heterogeneous nucleation and growth of polycrystalline silicon
نویسندگان
چکیده
منابع مشابه
Nucleation and growth of polycrystalline SiC
The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating g...
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Research has been conducted to develop a new means of producing large grained polycrystlline thin films for photovoltaic applications. The process is one of growth of controlled crystalline nuclei in an a-Si film. For this process to be practicle, we must develop a-Si films with crystallization behavior such that the rate of spontaneous crystallization (nucleation rate) is essentially zero at t...
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Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles ~the nuclei of nanowires!. Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high...
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Rights: © 1996 American Physical Society (APS). This is the accepted version of the following article: Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459, which has been published in final form at http://journals.aps.org/prb/abstract/1...
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ژورنال
عنوان ژورنال: Bulletin of Materials Science
سال: 1985
ISSN: 0250-4707,0973-7669
DOI: 10.1007/bf02744051